Extreme ultraviolet ray exposure mask and blank, and pattern transfer method

極限紫外線露光用マスク及びブランク並びにパターン転写方法

Abstract

【課題】基板1上に、露光光の高反射領域となる多層膜2が形成され、前記多層膜上に低反射領域となる薄膜のパターン3が形成された極限紫外線露光用(EUV)マスクにおいて、EUV露光による転写解像性を向上するために、EUVマスクの反射領域に用いる多層膜が、パーティクルなどの膜欠陥の発生しにくいEUV露光用マスク、およびそれを作製するためのEUV露光用マスクブランク、並びにそのマスクを用いたパターン形成方法を提供する。 【解決手段】前記高反射部となる多層膜2は、2種類の膜が交互に積層され、一方が金属を主成分とする膜であり、他方が金属とSiを主成分とする膜であることを特徴とする極限紫外線露光用マスク。 【選択図】図1
<P>PROBLEM TO BE SOLVED: To provide an extreme ultraviolet ray (EUV) exposure mask in which, in an extreme ultraviolet ray (EUV) exposure mask in which a multilayer film 2 as a high reflection region of exposed light is formed on a substrate 1, and a thin film pattern 3 as a low reflection region is formed on the multilayer film, a film defect such as a particle or the like is hard to occur in the multilayer film for use in the reflection region of the EUV mask for enhancing a transfer resolution property by an EUV exposure; to provide an EUV exposure mask blank for producing the same; and to provide a pattern forming method using its mask. <P>SOLUTION: In the ultimate ultraviolet ray exposure mask, in a multilayer film 2 as the high reflection part, two types thereof are laminated alternately. One is a film in which a metal is a main component and the other is a film in which the metal and Si are main components. <P>COPYRIGHT: (C)2005,JPO&NCIPI

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    Publication numberPublication dateAssigneeTitle
    US-8383298-B2February 26, 2013Kabushiki Kaisha ToshibaSubstrate processing method, manufacturing method of EUV mask, and EUV mask
    US-8908150-B2December 09, 2014Kabushiki Kaisha ToshibaSubstrate processing method, manufacturing method of EUV mask, and EUV mask